4월 28일 미국 등록특허

기업별 새 특허

많이 받은 기업의 특허

많이 받은 12곳만, 기업마다 AI·반도체 특허를 앞에 두고 최대 5건까지 보여 줘요(원문 제목, 누르면 구글 특허로 이동).

삼성전자 99건

• Semiconductor package including a semiconductor chip on a redistribution substrate and conductive structure spaced apart from the semiconductor chipUS 12616075반도체
• Semiconductor package with interposer including recessUS 12616065반도체
• Semiconductor package and method of manufacturing the sameUS 12616056반도체
• Method of fabricating a semiconductor package including an interposerUS 12616047반도체
• Semiconductor package and method of fabricating the sameUS 12616045반도체

퀄컴 51건

• Package comprising integrated devices with inner and outer solder interconnectsUS 12616043반도체
• Embedded electronic fusesUS 12614599반도체
• Machine learning (ML)-based dynamic demodulator selectionUS 12614071AI
• User equipment discontinuous reception timing in association with a cell discontinuous transmission configuration and/or a cell discontinuous reception configurationUS 12615688
• Keep-alive signal for network energy saving in a wireless networkUS 12615685

인텔 49건

• Stacked random-access memory devices with refrigerationUS 12616060반도체
• Methods and apparatus to reduce defects in interconnects between semicondcutor dies and package substratesUS 12616052반도체
• Microelectronic assemblies with anchor layer around a bridge dieUS 12616042반도체
• Permanent layer for bump chip attachUS 12616026반도체
• Metal insulator metal (MIM) capacitor architecturesUS 12616021반도체

애플 45건

• Display with light sources and quantum dotsUS 12615894반도체
• Device and method for CQI feedback to enable joint DL-UL scheduling in full duplex systemsUS 12615655
• Systems, methods, and devices for intelligent radio resource selection for V2X NR PC5US 12615652
• Frequency resource allocation for new radio multicast or broadcast servicesUS 12615647
• User equipment (UE) and methods for vehicle-to-vehicle (V2V) sidelink communication in accordance with a short transmission time interval (TTI)US 12615630

TSMC 41건

• Packages formed using RDL-last processUS 12616070반도체
• Wafer bonding incorporating thermal conductive pathsUS 12616046반도체
• Semiconductor and method for forming the sameUS 12616041반도체
• Multiband QAM interface for slab waveguideUS 12616033반도체
• Package structure with stiffener ring having slant sidewallUS 12616029반도체

델 40건

• Dynamic node key performance indicator reporting in open radio access networkUS 12615195AI
• System and method for managing data processing systems hosting distributed inference modelsUS 12614094AI
• Mounted circuit board/floating circuit board component connection systemUS 12615732
• Locking mechanism for sliding componentsUS 12615731
• Single piece structural members for security bezelsUS 12615730

IBM 34건

• Via connection to backside power delivery networkUS 12616019반도체
• Ultra-thin phase-change memory device with lateral electrode configurationUS 12615970반도체
• Forksheet transistor with advanced cell height scalingUS 12615841반도체
• Self-aligned backside contact structure for semiconductor device power deliveryUS 12615832반도체
• Space confined epi for stacked FETUS 12615819반도체

소니 30건

• Image sensor and electronic apparatusUS 12615872반도체
• Photodetection device and electronic deviceUS 12615858반도체
• Imaging element and semiconductor chipUS 12615856반도체
• Imaging element and imaging deviceUS 12615454반도체
• Imaging element and imaging deviceUS 12615447반도체

LG전자 29건

• Cooking applianceUS 12615700
• Cooking applianceUS 12615699
• Method for spatial resource of IAB node for simultaneous operation and apparatus using the methodUS 12615629
• Technique for performing multi-link communication in wireless communication systemUS 12615580
• Method and apparatus for performing QoE management based on AI model in a wireless communication systemUS 12615555

SK하이닉스 28건

• Image sensing device including through silicon via (TSV) structureUS 12615871반도체
• Semiconductor device and method for fabricating the sameUS 12615809반도체
• Semiconductor device and method of manufacturing semiconductor deviceUS 12615808반도체
• Three dimensional semiconductor device having a back-gate electrodeUS 12615776반도체
• Semiconductor device and manufacturing method of semiconductor deviceUS 12615774반도체

마이크론 26건

• Semiconductor device having contact plugUS 12616016반도체
• Isolation regions within a memory dieUS 12616007반도체
• Protective sealant for chalcogenide material and methods for forming the sameUS 12615968반도체
• Memory circuitry comprising strings of memory cellsUS 12615827반도체
• Memory array and method used in forming a memory array comprising strings of memory cellsUS 12615821반도체

마이크로소프트 24건

• Coordinated super-resolution processing by non-native hardware processing systemsUS 12614248AI
• Distilling transformers for neural cross-domain searchUS 12614066AI
• Enriching language model input with contextual dataUS 12614030AI
• Correcting a machine learning modelUS 12613939AI
• Automated generation of early warning predictive insights about usersUS 12613710AI